Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111)

Tools
- Tools
+ Tools

Bell, Gavin R., Burrows, Christopher W., Hase, Thomas P. A., Ashwin, M. J., McMitchell, Sean R. C., Sanchez, Ana M. and Aldous, James D. (2014) Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111). SPIN, 4 (4). pp. 1-8. 1440025. doi:10.1142/S2010324714400256 ISSN 2010-3247.

[img]
Preview
PDF
WRAP_s2010324714400256.pdf - Published Version - Requires a PDF viewer.
Available under License Creative Commons Attribution.

Download (4012Kb) | Preview
Official URL: http://dx.doi.org/10.1142/S2010324714400256

Request Changes to record.

Abstract

The cubic polymorph of the binary transition metal pnictide (TMP) MnSb, c-MnSb, has been predicted to be a robust half-metallic ferromagnetic (HMF) material with minority spin gap ≳1 eV. Here, MnSb epilayers are grown by molecular beam epitaxy (MBE) on GaAs and In0.5Ga0.5As(111) substrates and analyzed using synchrotron radiation X-ray diffraction. We find polymorphic growth of MnSb on both substrates, where c-MnSb co-exists with the ordinary niccolite n-MnSb polymorph. The grain size of the c-MnSb is of the order of tens of nanometer on both substrates and its appearance during MBE growth is independent of the very different epitaxial strain from the GaAs (3.1%) and In0.5Ga0.5As (0.31%) substrates.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Ferromagnetism, Epitaxy, X-rays -- Diffraction
Journal or Publication Title: SPIN
Publisher: World Scientific Publishing Co. Pte. Ltd.
ISSN: 2010-3247
Official Date: 16 October 2014
Dates:
DateEvent
16 October 2014Published
1 September 2014Accepted
30 April 2014Submitted
Volume: 4
Number: 4
Number of Pages: 8
Page Range: pp. 1-8
Article Number: 1440025
DOI: 10.1142/S2010324714400256
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 11 July 2016
Date of first compliant Open Access: 11 July 2016
Funder: Engineering and Physical Sciences Research Council (EPSRC), United States. Department of Energy, Diamond Light Source (Firm)
Grant number: EP/I00114X/1 (EPSRC), EP/K032852/1 (EPSRC), DE-AC02- 98CH10886 (DoE)
Adapted As:

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us