Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs

Tools
- Tools
+ Tools

Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Hu, Ji, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (2015) Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs. IEEE Transactions on Power Electronics, 30 (12). pp. 6978-6992. doi:10.1109/TPEL.2015.2388512 ISSN 0885-8993.

[img]
Preview
PDF
WRAP_tpel-reg-2014-05-0717.r2.pdf - Accepted Version - Requires a PDF viewer.

Download (2507Kb) | Preview
Official URL: http://dx.doi.org/10.1109/TPEL.2015.2388512

Request Changes to record.

Abstract

In this paper, a compact dynamic and fully coupled electrothermal model for parasitic BJT latchup is presented and validated by measurements. The model can be used to enhance the reliability of the latest generation of commercially available power devices. BJT latchup can be triggered by body-diode reverse-recovery hard commutation with high dV/dt or from avalanche conduction during unclamped inductive switching. In the case of body-diode reverse recovery, the base current that initiates BJT latchup is calculated from the solution of the ambipolar diffusion equation describing the minority carrier distribution in the antiparallel p-i-n body diode. For hard commutation with high dV/dt, the displacement current of the drain-body charging capacitance is critical for BJT latchup, whereas for avalanche conduction, the base current is calculated from impact ionization. The parasitic BJT is implemented in Simulink using the Ebers-Moll model and the temperature is calculated using a thermal network matched to the transient thermal impedance characteristic of the devices. This model has been applied to CoolMOS and SiC MOSFETs. Measurements show that the model correctly predicts BJT latchup during reverse recovery as a function of forward-current density and temperature. The model presented, when calibrated correctly by device manufacturers and applications engineers, is capable of benchmarking the robustness of power MOSFETs.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Electric inverters, Metal oxide semiconductor field-effect transistors , Bipolar transistors
Journal or Publication Title: IEEE Transactions on Power Electronics
Publisher: IEEE
ISSN: 0885-8993
Official Date: December 2015
Dates:
DateEvent
December 2015Published
January 2015Available
Volume: 30
Number: 12
Page Range: pp. 6978-6992
DOI: 10.1109/TPEL.2015.2388512
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Copyright Holders: IEEE
Date of first compliant deposit: 4 December 2015
Date of first compliant Open Access: 24 June 2016
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/K034804/1

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us