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The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching
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Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li and Mawby, P. A. (2015) The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching. IEEE Transactions on Power Electronics, 31 (6). pp. 4526-4535. doi:10.1109/TPEL.2015.2477831 ISSN 0885-8993.
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WRAP-effect-electrothermal-unclamped-inductive-switching-Mawby-2019.pdf - Accepted Version - Requires a PDF viewer. Download (2184Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/TPEL.2015.2477831
Abstract
Nonuniformities in the electrothermal characteristics of parallel connected devices reduce overall reliability since power is not equally dissipated between the devices. Furthermore, a nonuniform rate of operational degradation induces electrothermal variations thereby accelerating the development of failure. This paper uses simulations and experiments to quantitatively and qualitatively investigate the impact of electrothermal variations on the reliability of parallel connected power devices under unclamped inductive switching (UIS) conditions. This is especially pertinent to SiC where small die areas mean devices are often connected in parallel for higher current capability. Measurements and simulations show that increasing the variation in the initial junction temperatures and switching rates between parallel connected devices under UIS reduces the total sustainable avalanche current by 10%. It is seen that the device with the lower junction temperature and lower switching rate fails. The measurements also show that the maximum sustainable avalanche energy for a given variation in junction temperature and switching rate increases with the avalanche duration, meaning that the effect of electrothermal variation is more critical with high power (high current and low inductor) UIS pulses compared with high energy (low current and high inductance) pulses. These results are important for condition monitoring and reliability analysis.
| Item Type: | Journal Article | ||||||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||||
| Library of Congress Subject Headings (LCSH): | Silicon carbide -- Electric properties, Metal oxide semiconductor field-effect transistors , Power electronics | ||||||||||||
| Journal or Publication Title: | IEEE Transactions on Power Electronics | ||||||||||||
| Publisher: | IEEE | ||||||||||||
| ISSN: | 0885-8993 | ||||||||||||
| Official Date: | 10 September 2015 | ||||||||||||
| Dates: |
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| Volume: | 31 | ||||||||||||
| Number: | 6 | ||||||||||||
| Page Range: | pp. 4526-4535 | ||||||||||||
| DOI: | 10.1109/TPEL.2015.2477831 | ||||||||||||
| Status: | Peer Reviewed | ||||||||||||
| Publication Status: | Published | ||||||||||||
| Reuse Statement (publisher, data, author rights): | © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||||||
| Date of first compliant deposit: | 8 January 2016 | ||||||||||||
| Date of first compliant Open Access: | 25 November 2019 | ||||||||||||
| RIOXX Funder/Project Grant: |
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