Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Dislocation filters in GaAs on Si

Tools
- Tools
+ Tools

George, I, Becagli, F., Liu, Huiyun, Wu, Jiang, Tang, M. and Beanland, R. (2015) Dislocation filters in GaAs on Si. Semiconductor Science and Technology, 30 (11). 114004. doi:10.1088/0268-1242/30/11/114004 ISSN 0268-1242.

[img]
Preview
PDF
WRAP_Beanland_Dislocation_filters.pdf - Published Version - Requires a PDF viewer.
Available under License Creative Commons Attribution.

Download (1370Kb) | Preview
Official URL: http://dx.doi.org/10.1088/0268-1242/30/11/114004

Request Changes to record.

Abstract

Cross section transmission electron microscopy has been used to analyse dislocation filter layers
(DFLs) in five similar structures of GaAs on Si that had different amounts of strain in the DFLs
or different annealing regimes. By counting threading dislocation (TD) numbers through the
structure we are able to measure relative changes, even though the absolute density is not known.
The DFLs remove more than 90% of TDs in all samples. We find that the TD density in material
without DFLs decays as the inverse of the square root of the layer thickness, and that DFLs at the
top of the structure are considerably more efficient than those at the bottom. This indicates that
the interaction radius, the distance that TDs must approach to meet and annihilate, is dependent
upon the TD density.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Gallium arsenide semiconductors, Silicon, Semiconductors -- Materials, Semiconductors
Journal or Publication Title: Semiconductor Science and Technology
Publisher: Institute of Physics Publishing Ltd.
ISSN: 0268-1242
Official Date: 15 October 2015
Dates:
DateEvent
15 October 2015Published
22 July 2015Accepted
28 March 2015Submitted
Volume: 30
Number: 11
Article Number: 114004
DOI: 10.1088/0268-1242/30/11/114004
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)
Date of first compliant deposit: 14 January 2016
Date of first compliant Open Access: 17 February 2016
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/J013048/1, EP/J012904/1

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us