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Dislocation filters in GaAs on Si
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George, I, Becagli, F., Liu, Huiyun, Wu, Jiang, Tang, M. and Beanland, R. (2015) Dislocation filters in GaAs on Si. Semiconductor Science and Technology, 30 (11). 114004. doi:10.1088/0268-1242/30/11/114004
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Official URL: http://dx.doi.org/10.1088/0268-1242/30/11/114004
Abstract
Cross section transmission electron microscopy has been used to analyse dislocation filter layers
(DFLs) in five similar structures of GaAs on Si that had different amounts of strain in the DFLs
or different annealing regimes. By counting threading dislocation (TD) numbers through the
structure we are able to measure relative changes, even though the absolute density is not known.
The DFLs remove more than 90% of TDs in all samples. We find that the TD density in material
without DFLs decays as the inverse of the square root of the layer thickness, and that DFLs at the
top of the structure are considerably more efficient than those at the bottom. This indicates that
the interaction radius, the distance that TDs must approach to meet and annihilate, is dependent
upon the TD density.
| Item Type: | Journal Article | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
| Library of Congress Subject Headings (LCSH): | Gallium arsenide semiconductors, Silicon, Semiconductors -- Materials, Semiconductors | ||||||||
| Journal or Publication Title: | Semiconductor Science and Technology | ||||||||
| Publisher: | Institute of Physics Publishing Ltd. | ||||||||
| ISSN: | 0268-1242 | ||||||||
| Official Date: | 15 October 2015 | ||||||||
| Dates: |
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| Volume: | 30 | ||||||||
| Number: | 11 | ||||||||
| Article Number: | 114004 | ||||||||
| DOI: | 10.1088/0268-1242/30/11/114004 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Open Access | ||||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||||||
| Grant number: | EP/J013048/1, EP/J012904/1 |
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