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Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?
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Rougieux, Fiacre E., Grant, Nicholas E., Macdonald, Daniel and Murphy, John D. (2015) Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon? In: 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC), New Orleans, LA, USA, 14 -19 Jun 2015. Published in: 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) pp. 1-4. doi:10.1109/PVSC.2015.7355687
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Official URL: http://dx.doi.org/10.1109/PVSC.2015.7355687
Abstract
Recombination active defects are found in as-grown high-purity Czochralski (Cz) and Floating Zone (FZ) n-type silicon wafers. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use photoluminescence imaging, lifetime spectroscopy, and defect imaging along the ingot to help identify the defect(s). Our experimental findings suggest that vacancy-related complexes incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.
Item Type: | Conference Item (Paper) | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) | ||||
Publisher: | IEEE | ||||
Book Title: | 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) | ||||
Official Date: | 2015 | ||||
Dates: |
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Page Range: | pp. 1-4 | ||||
DOI: | 10.1109/PVSC.2015.7355687 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC) | ||||
Type of Event: | Conference | ||||
Location of Event: | New Orleans, LA, USA | ||||
Date(s) of Event: | 14 -19 Jun 2015 | ||||
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