Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors
UNSPECIFIED. (2004) Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors. APPLIED PHYSICS LETTERS, 85 (24). pp. 6019-6021. ISSN 0003-6951Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.1836001
Measurements of low frequency noise in Si and Si0.64Ge0.36 p-channel metal oxide semiconductor field effect transistors are compared with a model of carrier number fluctuations due to tunneling into an energy independent density of oxide trap states (N-ox) and associated mobility fluctuations. The failure of the model to explain the data leads us to suggest that reduced noise in the SiGe device as compared to Si is primarily associated with an energy dependence of N-ox and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to the Si control. (C) 2004 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Date:||13 December 2004|
|Number of Pages:||3|
|Page Range:||pp. 6019-6021|
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