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Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules
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Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li and Mawby, P. A. (Philip A.) (2015) Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules. IEEE Transactions on Industrial Electronics, 63 (2). pp. 849-863. doi:10.1109/TIE.2015.2491880
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Official URL: http://dx.doi.org/10.1109/TIE.2015.2491880
Abstract
The temperature and dV/dt dependence of crosstalk has been analyzed for Si-IGBT and SiC-MOSFET power modules. Due to a smaller Miller capacitance resulting from a smaller die area, the SiC module exhibits smaller shoot-through currents compared with similarly rated Si-IGBT modules in spite of switching with a higher dV/dt and with a lower threshold voltage. However, due to high voltage overshoots and ringing from the SiC Schottky diode, SiC modules exhibit higher shoot-through energy density and induce voltage oscillations in the dc link. Measurements show that the shoot-through current exhibits a positive temperature coefficient for both technologies, the magnitude of which is higher for the Si-IGBT, i.e., the shoot-through current and energy show better temperature stability in the SiC power module. The effectiveness of common techniques of mitigating shoot-through, including bipolar gate drives, multiple gate resistance switching paths, and external gate-source and snubber capacitors, has been evaluated for both technologies at different temperatures and switching rates. The results show that solutions are less effective for SiC-MOSFETs because of lower threshold voltages and smaller margins for negative gate bias on the SiC-MOSFET gate. Models for evaluating the parasitic voltage have also been developed for diagnostic and predictive purposes. These results are important for converter designers seeking to use SiC technology.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
| Divisions: | Faculty of Science > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Crosstalk, Silicon carbide , Metal oxide semiconductor field-effect transistors, Diodes, Schottky-barrier, Switching circuits | ||||||
| Journal or Publication Title: | IEEE Transactions on Industrial Electronics | ||||||
| Publisher: | IEEE | ||||||
| ISSN: | 0278-0046 | ||||||
| Official Date: | 16 October 2015 | ||||||
| Dates: |
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| Date of first compliant deposit: | 4 February 2016 | ||||||
| Volume: | 63 | ||||||
| Number: | 2 | ||||||
| Page Range: | pp. 849-863 | ||||||
| DOI: | 10.1109/TIE.2015.2491880 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Copyright Holders: | IEEE | ||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||||
| Grant number: | (EP/L007010/1), (EP/K034804/1) and (EP/K008161/1) |
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