UNSPECIFIED (2003) Reduced 1/f noise at 293K in 0.55 mu m p-Si0.3Ge0.7 hetero-MOSFETs. In: 33rd European Solid-State Device Research Conference, SEP 16-18, 2003, ESTORIL, PORTUGAL.

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Abstract

For the first time, we have demonstrated reduced 1/f, low-frequency (LF), noise in sub-mum metamorphic high Ge content p-Si0.3Ge0.7 MOSFETs at 293K. Three times lower LF noise over 1-100 Hz range at V-DS = - 50 mV and V-G - V-th = - 1.5 V was measured for a 0.55 mum effective gate length p-Si0.3Ge0.7 MOSFET compared with p-Si MOSFET. Performed quantitative analysis demonstrates the importance of carrier number fluctuations (CNF) and correlated mobility fluctuations (CMF) components of I If noise for p-Si surface channel MOSFET, and absence of CMF for P-Si0.3Ge0.7 buried channel MOSFETs.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Journal or Publication Title:	ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE
Publisher:	IEEE
ISBN:	0-7803-7999-3
Editor:	Franca, J and Freitas, P
Date:	2003
Number of Pages:	3
Page Range:	pp. 275-277
Publication Status:	Published
Title of Event:	33rd European Solid-State Device Research Conference
Location of Event:	ESTORIL, PORTUGAL
Date(s) of Event:	SEP 16-18, 2003
URI:	http://wrap.warwick.ac.uk/id/eprint/7663

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