Reduced 1/f noise at 293K in 0.55 mu m p-Si0.3Ge0.7 hetero-MOSFETs
UNSPECIFIED (2003) Reduced 1/f noise at 293K in 0.55 mu m p-Si0.3Ge0.7 hetero-MOSFETs. In: 33rd European Solid-State Device Research Conference, SEP 16-18, 2003, ESTORIL, PORTUGAL.Full text not available from this repository.
For the first time, we have demonstrated reduced 1/f, low-frequency (LF), noise in sub-mum metamorphic high Ge content p-Si0.3Ge0.7 MOSFETs at 293K. Three times lower LF noise over 1-100 Hz range at V-DS = - 50 mV and V-G - V-th = - 1.5 V was measured for a 0.55 mum effective gate length p-Si0.3Ge0.7 MOSFET compared with p-Si MOSFET. Performed quantitative analysis demonstrates the importance of carrier number fluctuations (CNF) and correlated mobility fluctuations (CMF) components of I If noise for p-Si surface channel MOSFET, and absence of CMF for P-Si0.3Ge0.7 buried channel MOSFETs.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE|
|Editor:||Franca, J and Freitas, P|
|Number of Pages:||3|
|Page Range:||pp. 275-277|
|Title of Event:||33rd European Solid-State Device Research Conference|
|Location of Event:||ESTORIL, PORTUGAL|
|Date(s) of Event:||SEP 16-18, 2003|
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