p-Si0.3Ge0.7 and p-Si0.2Ge0.8 MOSFETs of enhanced performance
UNSPECIFIED (2003) p-Si0.3Ge0.7 and p-Si0.2Ge0.8 MOSFETs of enhanced performance. In: 33rd European Solid-State Device Research Conference, ESTORIL, PORTUGAL, SEP 16-18, 2003. Published in: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE pp. 557-560.Full text not available from this repository.
Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7 and 0.8, reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 mum. They also show a lower knee voltage in output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with Sb punch-through stopper.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE|
|Editor:||Franca, J and Freitas, P|
|Number of Pages:||4|
|Page Range:||pp. 557-560|
|Title of Event:||33rd European Solid-State Device Research Conference|
|Location of Event:||ESTORIL, PORTUGAL|
|Date(s) of Event:||SEP 16-18, 2003|
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