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Anisotropic quantum corrections for 3-D finite-element Monte Carlo Simulations of nanoscale multigate transistors

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Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Lindberg, Jari, Dettmer, Wulf G., Peric, Djordje, Garcia-Loureiro, Antonio J. and Kalna, Karol (2016) Anisotropic quantum corrections for 3-D finite-element Monte Carlo Simulations of nanoscale multigate transistors. IEEE Transactions on Electron Devices, 63 (3). pp. 933-939. doi:10.1109/TED.2016.2519822 ISSN 0018-9383.

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Official URL: http://dx.doi.org/10.1109/TED.2016.2519822

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Abstract

Anisotropic 2-D Schrödinger equation-based quantum
corrections dependent on valley orientation are incorporated
into a 3-D finite-element Monte Carlo simulation toolbox. The
new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator
FinFETs with a gate length of 8.1 nm to study the
contributions of conduction valleys to the drive current in various
FinFET architectures and channel orientations. The 8.1 nm gate
length FinFETs are studied for two cross sections: rectangularlike
and triangular-like, and for two channel orientations: 100
and 110. We have found that quantum anisotropy effects play
the strongest role in the triangular-like 100 channel device
increasing the drain current by ∼13% and slightly decreasing
the current by 2% in the rectangular-like 100 channel device.
The quantum anisotropy has a negligible effect in any device
with the 110 channel orientation.
Index T

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Anisotropy, Monte Carlo method, Radiative corrections, Semiconductors
Journal or Publication Title: IEEE Transactions on Electron Devices
Publisher: IEEE
ISSN: 0018-9383
Official Date: March 2016
Dates:
DateEvent
March 2016Published
Volume: 63
Number: 3
Page Range: pp. 933-939
DOI: 10.1109/TED.2016.2519822
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)
Date of first compliant deposit: 4 March 2016
Date of first compliant Open Access: 4 March 2016
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/I010084/1

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