The Library
Anisotropic quantum corrections for 3-D finite-element Monte Carlo Simulations of nanoscale multigate transistors
Tools
Tools
Tools
Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Lindberg, Jari, Dettmer, Wulf G., Peric, Djordje, Garcia-Loureiro, Antonio J. and Kalna, Karol (2016) Anisotropic quantum corrections for 3-D finite-element Monte Carlo Simulations of nanoscale multigate transistors. IEEE Transactions on Electron Devices, 63 (3). pp. 933-939. doi:10.1109/TED.2016.2519822
|
PDF
WRAP_07397987.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution. Download (3712Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/TED.2016.2519822
Abstract
Anisotropic 2-D Schrödinger equation-based quantum
corrections dependent on valley orientation are incorporated
into a 3-D finite-element Monte Carlo simulation toolbox. The
new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator
FinFETs with a gate length of 8.1 nm to study the
contributions of conduction valleys to the drive current in various
FinFET architectures and channel orientations. The 8.1 nm gate
length FinFETs are studied for two cross sections: rectangularlike
and triangular-like, and for two channel orientations: 100
and 110. We have found that quantum anisotropy effects play
the strongest role in the triangular-like 100 channel device
increasing the drain current by ∼13% and slightly decreasing
the current by 2% in the rectangular-like 100 channel device.
The quantum anisotropy has a negligible effect in any device
with the 110 channel orientation.
Index T
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Library of Congress Subject Headings (LCSH): | Anisotropy, Monte Carlo method, Radiative corrections, Semiconductors | ||||
| Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||
| Publisher: | IEEE | ||||
| ISSN: | 0018-9383 | ||||
| Official Date: | March 2016 | ||||
| Dates: |
|
||||
| Volume: | 63 | ||||
| Number: | 3 | ||||
| Page Range: | pp. 933-939 | ||||
| DOI: | 10.1109/TED.2016.2519822 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Open Access | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
| Grant number: | EP/I010084/1 |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
Downloads
Downloads per month over past year
