The Library
Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs
Tools
Tools
Tools
Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs. In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Seoul, South Korea, 1-5 Jun 2015. Published in: 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) pp. 560-566. ISBN 9788957082546. doi:10.1109/ICPE.2015.7167839 ISSN 2150-6078.
|
PDF
WRAP-modeling-temperature-dependent-parasitic-gate turn-on-silicon-IGBTs-Jahdi-2015.pdf - Accepted Version - Requires a PDF viewer. Download (959Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/ICPE.2015.7167839
Abstract
Parasitic turn-on can cause unintentional triggering of the IGBTs since the discharge current of the Miller capacitance coupled with high dV/dt can activate a device that should be off. The short circuit current resulting from parasitic turn-on coupled with the high voltage causes significant power dissipation which can be a reliability issue. This issue is exacerbated by higher ambient temperatures since the negative temperature coefficient of the IGBT's threshold voltage as well as the positive temperature coefficient of the minority carrier lifetime will increase the peak and duration of the short circuit current. Accurate modeling of the shoot-through power and its temperature dependency is important for circuit designers when designing mitigation techniques like multiple resistive paths and bipolar gate drivers. The physics-based model proposed in this paper can produce accurate results with good matching over temperature. The model improves on compact circuit models based on lumped parameters.
| Item Type: | Conference Item (Paper) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | |||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Power electronics, Insulated gate bipolar transistors, Thermodynamics, Electric current converters -- Mathematical models | |||||||||
| Journal or Publication Title: | 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) | |||||||||
| Publisher: | IEEE | |||||||||
| ISBN: | 9788957082546 | |||||||||
| ISSN: | 2150-6078 | |||||||||
| Official Date: | 30 July 2015 | |||||||||
| Dates: |
|
|||||||||
| Page Range: | pp. 560-566 | |||||||||
| DOI: | 10.1109/ICPE.2015.7167839 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Reuse Statement (publisher, data, author rights): | © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||
| Date of first compliant deposit: | 14 January 2022 | |||||||||
| Date of first compliant Open Access: | 14 January 2022 | |||||||||
| RIOXX Funder/Project Grant: |
|
|||||||||
| Conference Paper Type: | Paper | |||||||||
| Title of Event: | Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on | |||||||||
| Type of Event: | Conference | |||||||||
| Location of Event: | Seoul, South Korea | |||||||||
| Date(s) of Event: | 1-5 Jun 2015 |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
Downloads
Downloads per month over past year
