Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Analysis of power device failure under avalanche mode conduction

Tools
- Tools
+ Tools

Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Analysis of power device failure under avalanche mode conduction. In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Seoul, South Korea, 1-5 Jun 2015. Published in: 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) pp. 1833-1839. ISBN 9788957082546. doi:10.1109/ICPE.2015.7168028 ISSN 2150-6078 .

[img]
Preview
PDF
WRAP-analysis-power-device-failure-under-avalanche-mode-conduction-Jahdi-2015.pdf - Accepted Version - Requires a PDF viewer.

Download (4Mb) | Preview
Official URL: http://dx.doi.org/10.1109/ICPE.2015.7168028

Request Changes to record.

Abstract

This paper investigates the physics of device failure during avalanche for 1.2 kV SiC MOSFETs, silicon MOSFETs and silicon IGBTs. The impact of ambient temperature, initial conditions of the device prior to avalanche breakdown and the avalanche duration is explored for the different technologies. Two types of tests were conducted namely (i) constant avalanche duration with different peak avalanche currents and (ii) constant peak avalanche current with different avalanche durations. SiC MOSFETs are shown to be the most rugged technology followed by the silicon IGBT and the silicon MOSFET. The material properties of SiC suppress the triggering of the parasitic BJT that causes thermal runaway during avalanche.

Item Type: Conference Item (Lecture)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Power electronics, Silicon carbide, Metal oxide semiconductor field-effect transistors, Electronic circuit design, Semiconductors -- Reliability, Insulated gate bipolar transistors, Temperature measurements
Journal or Publication Title: 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)
Publisher: IEEE
ISBN: 9788957082546
ISSN: 2150-6078
Official Date: 30 July 2015
Dates:
DateEvent
30 July 2015Published
Page Range: pp. 1833-1839
DOI: 10.1109/ICPE.2015.7168028
Status: Peer Reviewed
Publication Status: Published
Reuse Statement (publisher, data, author rights): © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 13 January 2022
Date of first compliant Open Access: 13 January 2022
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/L007010/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/K034804/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
Conference Paper Type: Lecture
Title of Event: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
Type of Event: Conference
Location of Event: Seoul, South Korea
Date(s) of Event: 1-5 Jun 2015

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us