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Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes
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Jahdi, Saeed, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes. In: Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on, Lappeenranta, Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe) ISBN 9781479930159. doi:10.1109/EPE.2014.6911007
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WRAP-modeling-turn-OFF-transient-energy-IGBT-controlled-silicon-PiN-diodes-Jahdi-2014.pdf - Accepted Version - Requires a PDF viewer. Download (1105Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/EPE.2014.6911007
Abstract
Silicon PiN diodes are the most widely used rectifying technology in industry especially in voltage source converters. The PiN diodes are usually used as anti-parallel diodes across silicon IGBTs where they conduct current in the reverse direction as the current commutates between the phases of the converter. They tend to generate a considerable amount of energy losses during the turn-OFF transient due to the reverse recovery characteristics. The rate at which the diode is switched will determine the switching energy and will affect EMI, electrothermal stresses and reliability. Hence, it is vital to be able to predict the switching energy of the diode during its turn-OFF transient given the switching conditions so as to have a realistic approach towards predicting the operating temperature. The switching energy of PiN diodes is determined by the peak reverse recovery current, the peak diode voltage overshoot, the time displacement between them as well as the temperature dependency of these peaks. In this paper, a model is presented and validated over a temperature range of -75 °C to 175 °C and with switching speeds (dI/dt) modulated by the gate resistance on the low side IGBT ranging from 10 © to 1000 ©. Comparisons show consistency between model prediction and measurements result. The model is a novel method of accurately predicting the switching energy of PiN diodes at different switching rates and temperatures using the measurements of a single switching rate at different temperatures.
| Item Type: | Conference Item (Lecture) | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
| Divisions: | Faculty of Science > Engineering | ||||
| Journal or Publication Title: | 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe) | ||||
| Publisher: | IEEE | ||||
| ISBN: | 9781479930159 | ||||
| Official Date: | 29 September 2014 | ||||
| Dates: |
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| DOI: | 10.1109/EPE.2014.6911007 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Publisher Statement: | © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Conference Paper Type: | Lecture | ||||
| Title of Event: | Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Lappeenranta, Finland | ||||
| Date(s) of Event: | 26-28 Aug 2014 |
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