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Cryogenic characterization of commercial SiC Power MOSFETs

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Chen, Han, Gammon, P. M., Shah, V. A., Fisher, Craig A., Chan, Chun Wa, Jahdi, Saeed, Hamilton, Dean P., Jennings, M. R., Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Cryogenic characterization of commercial SiC Power MOSFETs. In: Silicon Carbide and Related Materials 2014, Grenoble, France, Sep 2014. Published in: Materials Science Forum, 821-823 pp. 777-780. ISSN 1662-9752. doi:10.4028/www.scientific.net/MSF.821-823.777

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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.8...

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Abstract

The cryogenic performance of two commercially available SiC power MOSFETs are presented in this work. The devices are characterised in static and dynamic tests at 10 K intervals from 20-320 K. Static current-voltage characterisation indicates that at low temperatures threshold voltage, turn-on voltage, on-state resistance, transconductance, and the body diode turn-on voltage all increase while saturation current decreases. Dynamic, 60 V, 3A switching tests within the cryogenic chamber are also reported and the trends of switching speed, losses, and total power losses, which rise at low temperature, are presented. Overall, both MOSFETs are fully operable down to 30 K with both positive and negative changes in behaviour.

Item Type: Conference Item (Poster)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Cryoelectronics, Metal oxide semiconductor field-effect transistors
Journal or Publication Title: Materials Science Forum
Publisher: Trans Tech Publications Ltd.
ISSN: 1662-9752
Official Date: 30 June 2015
Dates:
DateEvent
30 June 2015Published
20 January 2015Accepted
10 September 2014Submitted
Volume: 821-823
Page Range: pp. 777-780
DOI: 10.4028/www.scientific.net/MSF.821-823.777
Status: Peer Reviewed
Publication Status: Published
Conference Paper Type: Poster
Title of Event: Silicon Carbide and Related Materials 2014
Type of Event: Conference
Location of Event: Grenoble, France
Date(s) of Event: Sep 2014

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