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Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor
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Pérez-Tomás, Amador, Catalàn, G., Fontserè, A., Iglesias, V., Chen, Han, Gammon, P. M., Jennings, M. R., Thomas, M., Fisher, Craig A., Sharma, Yogesh K., Placidi, M., Chmielowska, M., Chenot, S., Porti, M., Nafría, M. and Cordier, Y. (2015) Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. Nanotechnology, 26 (11). pp. 1-10. 115203. ISSN 0957-4484.
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Official URL: http://stacks.iop.org/0957-4484/26/i=11/a=115203
Abstract
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25–310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor ( I ds > 1 A mm −1 ) to be defined (0.5 A mm −1 at 300 °C). The vertical breakdown voltage has been determined to be ∼850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current.
Item Type: | Journal Article | ||||||||
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Subjects: | T Technology > T Technology (General) | ||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
Library of Congress Subject Headings (LCSH): | Nanotechnology, Homoepitaxy | ||||||||
Journal or Publication Title: | Nanotechnology | ||||||||
Publisher: | Institute of Physics Publishing Ltd. | ||||||||
ISSN: | 0957-4484 | ||||||||
Official Date: | 26 February 2015 | ||||||||
Dates: |
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Volume: | 26 | ||||||||
Number: | 11 | ||||||||
Number of Pages: | 10 | ||||||||
Page Range: | pp. 1-10 | ||||||||
Article Number: | 115203 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||
Date of first compliant deposit: | 31 March 2016 | ||||||||
Date of first compliant Open Access: | 1 April 2016 | ||||||||
Funder: | Spain. Ministerio de Economía y Competitividad [Ministry of Economy and Competitiveness] (MINECO) | ||||||||
Grant number: | SEV-2013-0295 (MINECO) |
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