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Simulation of a new hybrid Si/SiC power device for harsh environment applications
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Gammon, P. M., Chan, Chun Wa and Mawby, P. A. (Philip A.) (2015) Simulation of a new hybrid Si/SiC power device for harsh environment applications. In: High Temperature Electronics Network (HiTEN), Cambridge, Jul 2015. Published in: HiTEN , 2015 (HiTEN). pp. 190-194.
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WRAP_Gammon_HiTEN Paper.pdf - Submitted Version - Requires a PDF viewer. Download (1015Kb) | Preview |
Official URL: http://imapsource.org/doi/abs/10.4071/HiTEN-Sessio...
Abstract
A new power device structure is proposed, conceived to operate in a high temperature, harsh environment, for example within a motor drive application down hole, as an inverter in the engine bay of an electric car, or as a solar inverter in space. The lateral silicon power device resembles a laterally diffused MOSFET (LDMOS), such as those implemented within silicon on insulator (SOI) substrates. However, unlike SOI, the Si thin film has been transferred directly onto a semi-insulating 6H silicon carbide (6H-SiC) substrate via a wafer bonding process. Thermal simulations of the hybrid Si/SiC substrate have shown that the high thermal conductivity of the SiC will have a junction-to-case temperature approximately 4 times less that an equivalent SOI device, reducing the effects of self-heating. Electrical simulations of a 600 V power device, implemented entirely with the silicon thin film, suggest that it will retain the ability of SOI to minimise leakage at high temperature, but does so with 50% less conduction losses.
| Item Type: | Conference Item (Lecture) | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Library of Congress Subject Headings (LCSH): | Silicon carbide -- Electric properties, Metal oxide semiconductor field-effect transistors | ||||
| Journal or Publication Title: | HiTEN | ||||
| Publisher: | International Microelectronics Assembly and Packaging Society | ||||
| Official Date: | 2015 | ||||
| Dates: |
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| Volume: | 2015 | ||||
| Number: | HiTEN | ||||
| Page Range: | pp. 190-194 | ||||
| Status: | Not Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Conference Paper Type: | Lecture | ||||
| Title of Event: | High Temperature Electronics Network (HiTEN) | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Cambridge | ||||
| Date(s) of Event: | Jul 2015 |
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