UNSPECIFIED (2004) High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (10). L106-L109. ISSN 0268-1242

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Abstract

Strained Ge p-channel heterostructures have been realized by hybrid-epitaxial growth. Strain-tuning Si0.4Ge0.6 virtual substrates were grown by ultra-high vacuum chemical vapour deposition and active layers' were deposited by solid-source molecular beam epitaxy at low temperature. Following ex situ annealing, Hall effect measurements revealed a hole mobility of 1900 cm(2) V-1 s(-1) at 300 K (27 000 cm(2) V-1 s(-1) at 10 K), with a density of 1.8 x 10(12) cm(-2), giving a conductance in excess of current Ge heterostructures. Using a maximum-entropy mobility-spectrum analysis, 1.0 x 10(12) cm(-2) of these holes were found to have a mobility of 2700 cm(2) V-1 s(-1) at 300 K.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher:	IOP PUBLISHING LTD
ISSN:	0268-1242
Date:	October 2004
Volume:	19
Number:	10
Number of Pages:	4
Page Range:	L106-L109
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/7793

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