High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth
UNSPECIFIED. (2004) High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (10). L106-L109. ISSN 0268-1242Full text not available from this repository.
Strained Ge p-channel heterostructures have been realized by hybrid-epitaxial growth. Strain-tuning Si0.4Ge0.6 virtual substrates were grown by ultra-high vacuum chemical vapour deposition and active layers' were deposited by solid-source molecular beam epitaxy at low temperature. Following ex situ annealing, Hall effect measurements revealed a hole mobility of 1900 cm(2) V-1 s(-1) at 300 K (27 000 cm(2) V-1 s(-1) at 10 K), with a density of 1.8 x 10(12) cm(-2), giving a conductance in excess of current Ge heterostructures. Using a maximum-entropy mobility-spectrum analysis, 1.0 x 10(12) cm(-2) of these holes were found to have a mobility of 2700 cm(2) V-1 s(-1) at 300 K.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||SEMICONDUCTOR SCIENCE AND TECHNOLOGY|
|Publisher:||IOP PUBLISHING LTD|
|Official Date:||October 2004|
|Number of Pages:||4|
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