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Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields

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Shi, Q., Zudov, M. A., Morrison, Christopher and Myronov, Maksym (2015) Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields. Physical Review B (Condensed Matter and Materials Physics), 91 (20). pp. 1-5. 201301(R). doi:10.1103/PhysRevB.91.201301 ISSN 1098-0121.

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Official URL: http://dx.doi.org/10.1103/PhysRevB.91.201301

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Abstract

We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed 3×104. The anisotropy occurs in a wide range of filling factors where it is determined primarily by the tilt angle. The lack of significant anisotropy without an in-plane field, easy tunability, and persistence to higher temperatures and filling factors set this anisotropy apart from nematic phases in GaAs/AlGaAs.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Anisotropy, Quantum wells
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: 8 May 2015
Dates:
DateEvent
8 May 2015Published
27 August 2014Submitted
Volume: 91
Number: 20
Number of Pages: 5
Page Range: pp. 1-5
Article Number: 201301(R)
DOI: 10.1103/PhysRevB.91.201301
Status: Peer Reviewed
Publication Status: Published
Date of first compliant deposit: 18 April 2016
Date of first compliant Open Access: 18 April 2016
Funder: United States. Department of Energy. Office of Basic Energy Sciences (OBES), Engineering and Physical Sciences Research Council (EPSRC), National Science Foundation (U.S.) (NSF)
Grant number: ER 46640-SC0002567 (OBES), EP/J003263/1 (EPSRC), EP/J001074/1 (EPSRC), DMR-0654118 (NSF)

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