Ultrahigh room-temperature hole mobility in a SiGe quantum well
UNSPECIFIED. (2004) Ultrahigh room-temperature hole mobility in a SiGe quantum well. APPLIED PHYSICS LETTERS, 85 (15). pp. 3145-3147. ISSN 0003-6951Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.1804236
We report an ultrahigh room-temperature hole drift mobility obtained in a Si0.2Ge0.8 quantum well with a parabolic-like Ge profile, which has at its core a p-type modulation-doped (MOD) Si/Si0.2Ge0.8/Si0.65Ge0.35/Si(001) heterostructure. High-conductivity holes at 293 K with a drift mobility of 3600 cm(2) V-1 s(-1) at a sheet carrier density of 4.94x10(12) cm(-2) were obtained in the Si0.2Ge0.8 quantum well after optimum annealing at 750degreesC for 30 min. Hall mobility and sheet carrier density of this heterostructure are 1776 cm(2) V-1 s(-1) and 2.37x10(13) cm(-2), respectively. Structural characterization of the as-grown and the annealed samples revealed that the annealing had caused Si0.2Ge0.8 channel broadening, smearing of interfaces, and formation of a parabolic-like Ge profile that significantly improved room-temperature hole transport properties. The reported values of hole mobility are much higher than in the bulk Ge. (C) 2004 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Date:||11 October 2004|
|Number of Pages:||3|
|Page Range:||pp. 3145-3147|
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