The Library
On the vertical stacking in semiconducting WSe2 bilayers
Tools
Tools
Tools
Sanchez, Ana M., Peters, Jonathan J. P., Wu, S., Huang, C., Cobden, D., Xu, X. and Beanland, R. (2015) On the vertical stacking in semiconducting WSe2 bilayers. Materials Science and Technology, 32 (3). pp. 226-231. doi:10.1080/02670836.2016.1154696 ISSN 0267-0836.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1080/02670836.2016.1154696
Abstract
The vertical stacking in semiconducting WSe2 bilayers grown by physical vapour transport was studied using atomic resolution annular dark field imaging. Our results show that the most common geometry was consistent with AA′, the most stable configuration. However in some areas AB alignment was also observed, as expected due to the small energy difference between AA′ and AB. Additionally, two different rotational stacking orientations were observed, with rotation angles of 12 and 21°. These different vertical WSe2 bilayers could provide a means of engineering electronic band structure for specific optoelectronic properties.
| Item Type: | Journal Article | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
| Journal or Publication Title: | Materials Science and Technology | ||||||||
| Publisher: | Maney Publishing | ||||||||
| ISSN: | 0267-0836 | ||||||||
| Official Date: | 6 April 2015 | ||||||||
| Dates: |
|
||||||||
| Volume: | 32 | ||||||||
| Number: | 3 | ||||||||
| Page Range: | pp. 226-231 | ||||||||
| DOI: | 10.1080/02670836.2016.1154696 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
