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Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation
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Chan, Chun Wa, Mawby, P. A. and Gammon, P. M. (2016) Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation. IEEE Transactions on Electron Devices, 63 (6). pp. 2442-2448. doi:10.1109/TED.2016.2550865
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Official URL: http://dx.doi.org/10.1109/TED.2016.2550865
Abstract
This paper presents the design and optimization of a 600 V silicon-on-silicon carbide (Si/SiC) laterally diffused MOSFET with linear doping profile in the drift region for high-temperature applications. The proposed structure has an embedded silicon-on-insulator (SOI) layout through which the traditional graded doping theory for SOI can be applied in the Si/SiC architecture. An SOI counterpart is introduced as a benchmark and modeled alongside the proposed structure. Comparisons between them show that they have the near-identical OFF-state and breakdown characteristics, with a significant tunneling leakage component emerging above 450 V. In the ON state, the Si/SiC device has higher electrical resistance but much lower thermal resistance, leading to less self-heating and higher reliability.
| Item Type: | Journal Article | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors -- Simulation methods, Silicon carbide -- Electric properties | ||||||||
| Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||||||
| Publisher: | IEEE | ||||||||
| ISSN: | 0018-9383 | ||||||||
| Official Date: | 20 April 2016 | ||||||||
| Dates: |
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| Volume: | 63 | ||||||||
| Number: | 6 | ||||||||
| Page Range: | pp. 2442-2448 | ||||||||
| DOI: | 10.1109/TED.2016.2550865 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Open Access | ||||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Royal Academy of Engineering (Great Britain) | ||||||||
| Grant number: | EP/N00647X/1 |
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