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Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation

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Chan, Chun Wa, Mawby, P. A. and Gammon, P. M. (2016) Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation. IEEE Transactions on Electron Devices, 63 (6). pp. 2442-2448. doi:10.1109/TED.2016.2550865

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Official URL: http://dx.doi.org/10.1109/TED.2016.2550865

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Abstract

This paper presents the design and optimization of a 600 V silicon-on-silicon carbide (Si/SiC) laterally diffused MOSFET with linear doping profile in the drift region for high-temperature applications. The proposed structure has an embedded silicon-on-insulator (SOI) layout through which the traditional graded doping theory for SOI can be applied in the Si/SiC architecture. An SOI counterpart is introduced as a benchmark and modeled alongside the proposed structure. Comparisons between them show that they have the near-identical OFF-state and breakdown characteristics, with a significant tunneling leakage component emerging above 450 V. In the ON state, the Si/SiC device has higher electrical resistance but much lower thermal resistance, leading to less self-heating and higher reliability.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors -- Simulation methods, Silicon carbide -- Electric properties
Journal or Publication Title: IEEE Transactions on Electron Devices
Publisher: IEEE
ISSN: 0018-9383
Official Date: 20 April 2016
Dates:
DateEvent
20 April 2016Published
29 March 2016Accepted
5 August 2015Submitted
Volume: 63
Number: 6
Page Range: pp. 2442-2448
DOI: 10.1109/TED.2016.2550865
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), Royal Academy of Engineering (Great Britain)
Grant number: EP/N00647X/1

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