UNSPECIFIED. (2004) Temperature invariance of InN electron accumulation. PHYSICAL REVIEW B, 70 (11). -. ISSN 1098-0121

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Abstract

The temperature dependence of the electron accumulation at clean InN(0001)-(1x1) surfaces has been investigated by high-resolution electron-energy-loss spectroscopy. Semiclassical dielectric theory simulations of the energy-loss spectra at 295 K and 565 K along with solutions to the Poisson equation enable carrier profiles of the near-surface region to be determined. These measurements reveal similar electron accumulation for both temperatures. The surface-state density, N-ss, and the surface Fermi level, E-FS, were found to be independent of temperature, with N(ss)similar to2.4x10(13) cm(-2) and E(FS)similar to1.5 eV above the valence-band maximum. The slight difference in the carrier profiles between the two temperatures can be accounted for by the change in the electron screening length. This is a consequence of the reduction in the band gap that results in a decrease in the electron effective mass with increasing temperature.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	PHYSICAL REVIEW B
Publisher:	AMERICAN PHYSICAL SOC
ISSN:	1098-0121
Date:	September 2004
Volume:	70
Number:	11
Number of Pages:	6
Page Range:	-
Identification Number:	10.1103/PhysRevB.70.115333
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/7952

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