Indium nitride: Evidence of electron accumulation
UNSPECIFIED (2004) Indium nitride: Evidence of electron accumulation. In: 31st Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Kailua, HI, JAN 18-22, 2004. Published in: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22 (4). pp. 2175-2178.Full text not available from this repository.
Official URL: http://dx.doi.org/10.1116/1.1771672
The electronic properties of clean InN(0001) surfaces have been investigated by high-resolution electron-energy-loss spectroscopy of the conduction band electron plasmon excitations and valence band x-ray photoemission spectroscopy. An intrinsic surface electron accumulation layer is found to exist, with the associated downward band bending occurring to neutralize charged donor-type surface states. Semiclassical dielectric theory simulations of the energy-loss spectra and charge profile calculations indicate a surface state density of 2.5(+/-0.2) x 10(13)cm(-2) and a surface Fermi level of 1.64+/-0.10 eV above the valence band maximum and 0.89+/-0.10 eV above the conduction band minimum. This location of the surface Fermi level is in agreement with the valence band photoemission spectra. These observations are compared with recent evidence of electron accumulation at InN surfaces provided by capacitance-voltage profiling, Hall measurements, and synchrotron-radiation photoemission spectroscopy. (C) 2004 American. Vacuum Society.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B|
|Publisher:||A V S AMER INST PHYSICS|
|Official Date:||July 2004|
|Number of Pages:||4|
|Page Range:||pp. 2175-2178|
|Title of Event:||31st Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31)|
|Location of Event:||Kailua, HI|
|Date(s) of Event:||JAN 18-22, 2004|
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