UNSPECIFIED (2004) Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (9). L95-L98. doi:10.1088/0268-1242/19/9/L01

Full text not available from this repository, contact author.

Request Changes to record.

Abstract

An investigation of dynamic-threshold (DT) performance was carried out on a 0.5 mum gate length p-type Si:SiGe heterostructure field effect transistor, for temperatures ranging from T = 300 K to T = 10 K. The maximum low-field transconductance of DT-mode operation was found to be 30% higher than in non-normal, through a better control of carriers in the channel. The subthreshold slope of the device, when operated in DT mode, also improved, decreasing by 28%. The sensitivity of the threshold voltage to substrate bias was extracted from experimental data over the whole temperature range, and was found to be higher in the SiGe device than in a corresponding Si control device. The substrate sensitivity was used together with equations derived from classical Si MOSFET theory to successfully predict the performance improvement due to DT-mode operation, at all temperatures.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher:	IOP PUBLISHING LTD
ISSN:	0268-1242
Official Date:	September 2004
Dates:	Date Event September 2004 UNSPECIFIED
Volume:	19
Number:	9
Number of Pages:	4
Page Range:	L95-L98
DOI:	10.1088/0268-1242/19/9/L01
Publication Status:	Published

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item