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Temperature sensitive electrical parameters for condition monitoring in SiC power MOSFETs

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Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Hu, Ji, Ran, Li and Mawby, P. A. (Philip A.) (2016) Temperature sensitive electrical parameters for condition monitoring in SiC power MOSFETs. In: 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016), Glasgow, UK, 19-21 April 2016. Published in: 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016) ISBN 9781785611889.

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Official URL: http://dx.doi.org/10.1049/cp.2016.0267

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Abstract

This paper presents an analysis of the turn ON transient for SiC power MOSFETs and defines a Temperature Sensitive Electrical Parameter (TSEP) which is suitable for condition monitoring. The drain current switching rate dIDS/dt and its temperature dependency have been measured and analysed for commercially available 1.2 kV/10 A, 1.2 kV/24 A and 1.2 kV/42 A SiC MOSFETs from Wolfspeed showing that at lower switching speeds, i.e. using high gate resistances, it can be a suitable TSEP for condition monitoring. The impact of temperature on the switching speed indicates that the current switching rate is a more effective TSEP for higher current rated devices and the evaluation of the switching losses suggests that the sacrifice in switching speed for enabling the ability of estimating the junction temperature is not a major trade-off.

Item Type: Conference Item (Lecture)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors
Journal or Publication Title: 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)
Publisher: IET
ISBN: 9781785611889
Official Date: 1 March 2016
Dates:
DateEvent
1 March 2016Accepted
7 January 2016Submitted
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 26 January 2017
Date of first compliant Open Access: 26 January 2017
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/L007010/1, EP/K034804/1, EP/K008161/1
Conference Paper Type: Lecture
Title of Event: 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)
Type of Event: Conference
Location of Event: Glasgow, UK
Date(s) of Event: 19-21 April 2016

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