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Si1-x Ge x /Si interface profiles measured to sub-nanometer precision using uleSIMS energy sequencing

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Morris, R. J. H. (Richard J. H.), Hase, Thomas P. A., Sánchez, Ana M. and Rowlands, G. (George) (2016) Si1-x Ge x /Si interface profiles measured to sub-nanometer precision using uleSIMS energy sequencing. Journal of The American Society for Mass Spectrometry, 27 (10). pp. 1694-1702. doi:10.1007/s13361-016-1439-4

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Official URL: http://dx.doi.org/10.1007/s13361-016-1439-4

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Abstract

The utility of energy sequencing for extracting an accurate matrix level interface profile using ultra-low energy SIMS (uleSIMS) is reported. Normally incident O2 + over an energy range of 0.25–2.5 keV were used to probe the interface between Si0.73Ge0.27/Si, which was also studied using high angle annular dark field scanning transmission electron microscopy (HAADF-STEM). All the SIMS profiles were linearized by taking the well understood matrix effects on ion yield and erosion rate into account. A method based on simultaneous fitting of the SIMS profiles measured at different energies is presented, which allows the intrinsic sample profile to be determined to sub-nanometer precision. Excellent agreement was found between the directly imaged HAADF-STEM interface and that derived from SIMS.

Item Type: Journal Article
Subjects: Q Science > QD Chemistry
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Secondary ion mass spectrometry, Metrology
Journal or Publication Title: Journal of The American Society for Mass Spectrometry
Publisher: Springer New York LLC
ISSN: 1044-0305
Official Date: October 2016
Dates:
DateEvent
October 2016Published
21 July 2016Available
17 June 2016Accepted
26 February 2016Submitted
Date of first compliant deposit: 13 February 2017
Volume: 27
Number: 10
Page Range: pp. 1694-1702
DOI: 10.1007/s13361-016-1439-4
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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