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Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain
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Daranagama, Thilini, Pathirana, Vasantha, Udrea, Florin and McMahon, Richard A. (2015) Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain. In: IEEE 13th Brazilian Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC) 2015, Fortaleza, 29 Nov - 02 Dec 2015. Published in: 2015 IEEE 13th Brazilian Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC), 2015 pp. 1-6. ISBN 9781479987795 . doi:10.1109/COBEP.2015.7420235
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Official URL: http://dx.doi.org/10.1109/COBEP.2015.7420235
Abstract
Silicon Carbide (SiC) is becoming increasingly of interest to the power electronics industry due to its superior characteristics such as high critical electric field, larger bandgap and higher thermal conductivity in comparison to Silicon (Si). Taking advantage of these material properties, high voltage devices could be fabricated with lower power losses and high temperature and frequency operability, which could surpass the limits enforced by Si power devices. SiC BJTs in particular are advantageous for the medium to high-voltage application range (e.g. HVDC multi-level converters) as they exhibit lower on-state losses while maintaining superior switching performance. The only drawback is being a current driven device in contrast to voltage-controlled SiC MOSFETs. Therefore, devices with a large current gain (β) are highly desirable for simplifying the base drive. In this paper, a novel circular structure with improved β has been demonstrated. Although the material quality of epilayers and surface passivation layer are the most significant factors limiting β, the geometrical design also plays a vital role in achieving a higher β. Therefore, the influence of the emitter geometry on β and the Rittner effect have been discussed by comparing rectangular and circular cell structures, with the aid of the software Sentaurus TCAD.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > WMG (Formerly the Warwick Manufacturing Group) | ||||
Journal or Publication Title: | 2015 IEEE 13th Brazilian Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC) | ||||
Publisher: | IEEE | ||||
ISBN: | 9781479987795 | ||||
Book Title: | 2015 IEEE 13th Brazilian Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC) | ||||
Official Date: | 2015 | ||||
Dates: |
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Volume: | 2015 | ||||
Page Range: | pp. 1-6 | ||||
DOI: | 10.1109/COBEP.2015.7420235 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | IEEE 13th Brazilian Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC) 2015 | ||||
Type of Event: | Conference | ||||
Location of Event: | Fortaleza | ||||
Date(s) of Event: | 29 Nov - 02 Dec 2015 | ||||
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