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A gallium nitride FET based DC-DC converter for the new 48 V automotive system

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Roschatt, P. M., McMahon, Richard A. and Pickering, S. (2014) A gallium nitride FET based DC-DC converter for the new 48 V automotive system. In: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014), Manchester, UK, 8-10 Apr 2014. Published in: Power Electronics, Machines and Drives (PEMD 2014), 7th IET International Conference on, 2014 pp. 1-6. ISBN 9781849198158. doi:10.1049/cp.2014.0502

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Official URL: http://dx.doi.org/10.1049/cp.2014.0507

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Abstract

This paper presents the design and evaluation of a gallium nitride hard switched non isolated DC-DC converter for the future 48 V automotive power system. The use of new wide band gap devices would allow an increase of the switching frequency to the MHz region allowing the design of a smaller, lighter and more energy dense converter. The work presents a single phase leg converter with peak efficiencies greater than 90% and an output power of 198 W.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science > WMG (Formerly the Warwick Manufacturing Group)
Journal or Publication Title: Power Electronics, Machines and Drives (PEMD 2014), 7th IET International Conference on
Publisher: IET
ISBN: 9781849198158
Book Title: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)
Official Date: 2014
Dates:
DateEvent
2014Published
Volume: 2014
Page Range: pp. 1-6
DOI: 10.1049/cp.2014.0502
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)
Type of Event: Conference
Location of Event: Manchester, UK
Date(s) of Event: 8-10 Apr 2014
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