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3C-SiC transistor with Ohmic contacts defined at room temperature
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Li, Fan, Sharma, Yogesh K., Walker, David, Hindmarsh, Steven A., Jennings, Michael, Martin, David, Fisher, Craig A., Gammon, P. M., Pérez-Tomás, Amador and Mawby, P. A. (2016) 3C-SiC transistor with Ohmic contacts defined at room temperature. IEEE Electron Device Letters . doi:10.1109/LED.2016.2593771 ISSN 0741-3106.
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Official URL: http://dx.doi.org/10.1109/LED.2016.2593771
Abstract
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here we present a low resistivity (~3x10-5 Ω.cm2) Ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with as-deposited Ohmic contacts were fabricated, and it turned out not only the Ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm2/V.s) was achieved compared with the annealed devices.
Item Type: | Journal Article | ||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
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Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Ohmic contacts | ||||||
Journal or Publication Title: | IEEE Electron Device Letters | ||||||
Publisher: | IEEE | ||||||
ISSN: | 0741-3106 | ||||||
Official Date: | 2016 | ||||||
Dates: |
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DOI: | 10.1109/LED.2016.2593771 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 24 August 2016 | ||||||
Date of first compliant Open Access: | 24 August 2016 | ||||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||||
Grant number: | EP/I038543/1 |
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