Li, Fan, Sharma, Yogesh K., Jennings, M. R., Pérez-Tomás, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si. Materials Science Forum, 858 . pp. 667-670. doi:10.4028/www.scientific.net/MSF.858.667 ISSN 1662-9752.
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Abstract
In this work we studied the gate oxidation temperature and nitridation influences on the resultant 3C-SiC MOSFET forward characteristics. Conventional long channel lateral MOSFETs were fabricated on 3C-SiC(100) epilayers grown on Si substrates using five different oxidation process. Both room temperature and high temperature (up to 500K) forward IV performance were characterised, and channel mobility as high as 90cm2/V.s was obtained for devices with nitrided gate oxide, considerable higher than the ones without nitridation process (~70 cm2/V.s).
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering |
| Journal or Publication Title: | Materials Science Forum |
| Publisher: | Trans Tech Publications Ltd. |
| ISSN: | 1662-9752 |
| Official Date: | May 2016 |
| Dates: | Date Event May 2016 Published 2 January 2016 Accepted |
| Volume: | 858 |
| Page Range: | pp. 667-670 |
| DOI: | 10.4028/www.scientific.net/MSF.858.667 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | https://wrap.warwick.ac.uk/81403/ |
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