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Ohmic contact reliability of commercially available SiC MOSFETs isothermally aged for long periods at 300°C in air
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Hamilton, Dean P., Hindmarsh, Steven A., York, Stephen J., Walker, David, Russell, Stephen, Jennings, M. R., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) Ohmic contact reliability of commercially available SiC MOSFETs isothermally aged for long periods at 300°C in air. Materials Science Forum, 858 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.858.557 ISSN 1662-9752.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.8...
Abstract
In this paper, the source contacts of three different SiC MOSFET power device dies have been investigated using TEM and EDX analysis before and after long-term isothermal heating at 300°C in air. The device type with Al-Ni based ohmic source contacts showed degradation of its contacts after only 24 hours, as indicated by the EDX analysis. The other two device types with Ti-based source contacts and Al-Ni-based with a carbon layer were found to be thermo-mechanically stable. An XRD analysis was also carried out on the backside drain contact of the first device type in order to try to identify a new layer within the associated metal stack that had appeared during aging.
Item Type: | Journal Article | ||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Journal or Publication Title: | Materials Science Forum | ||||||
Publisher: | Trans Tech Publications Ltd. | ||||||
ISSN: | 1662-9752 | ||||||
Official Date: | May 2016 | ||||||
Dates: |
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Volume: | 858 | ||||||
Page Range: | pp. 557-560 | ||||||
DOI: | 10.4028/www.scientific.net/MSF.858.557 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access |
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