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Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

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Morrison, C., Casteleiro, Catarina, Leadley, D. R. (David R.) and Myronov, Maksym (2016) Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas. Applied Physics Letters, 109 (10). 102103. doi:10.1063/1.4962432

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Official URL: http://dx.doi.org/10.1063/1.4962432

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Abstract

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Quantum wells, Transport theory
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 7 September 2016
Dates:
DateEvent
7 September 2016Published
26 August 2016Accepted
27 May 2016Submitted
Volume: 109
Number: 10
Article Number: 102103
DOI: 10.1063/1.4962432
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/J003263/1 and EP/J001074/1
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