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Low leakage-current InAsSb nanowire photodetectors on silicon
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Thompson, Michael D., Alhodaib, Aiyeshah, Craig, Adam P., Robson, Alex, Aziz, Atif, Krier, Anthony, Svensson, Johannes, Wernersson, Lars-Erik, Sánchez, Ana M. and Marshall, Andrew R. J. (2016) Low leakage-current InAsSb nanowire photodetectors on silicon. Nano Letters, 16 (1). pp. 182-187. doi:10.1021/acs.nanolett.5b03449 ISSN 1530-6984.
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Official URL: http://dx.doi.org/10.1021/acs.nanolett.5b03449
Abstract
Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm2 and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.
Item Type: | Journal Article | ||||||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||||
Journal or Publication Title: | Nano Letters | ||||||||||
Publisher: | American Chemical Society | ||||||||||
ISSN: | 1530-6984 | ||||||||||
Official Date: | 13 January 2016 | ||||||||||
Dates: |
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Volume: | 16 | ||||||||||
Number: | 1 | ||||||||||
Page Range: | pp. 182-187 | ||||||||||
DOI: | 10.1021/acs.nanolett.5b03449 | ||||||||||
Status: | Peer Reviewed | ||||||||||
Publication Status: | Published | ||||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||||
Date of first compliant deposit: | 31 March 2020 | ||||||||||
Date of first compliant Open Access: | 31 March 2020 |
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