Setiadi, D., Udrea, F., Milne, W. I., Covington, James A. and Gardner, J. W. (1999) 3D numerical simulation of novel SOI MOSFET based gas sensors. In: Chemical Sensors IV, Proceedings of the Symposium, San Diego, CA, 1999. Published in: Proceedings (Electrochemical Society), 99 (23). pp. 416-419. ISBN 9781566772464.

Research output not available from this repository, contact author.

Request Changes to record.

Abstract

This paper describes 3D numerical simulations of high temperature gas sensors based on SOI technology. A microheater is made of an SOI MOSFET device based on the self-heating. This new generation of integrated gas sensors has low power consumption (less than or equal to 25 mW) and uniform temperature distribution within the active area for a target temperature of 400 degrees C. The fabrication of the sensor is fully compatible with standard CMOS SOI technology The sensor has the enhanced thermal stability required at high operating temperatures, and improved device controllability due to MOS gate control.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science > Engineering
Series Name:	ELECTROCHEMICAL SOCIETY SERIES
Journal or Publication Title:	Proceedings (Electrochemical Society)
Publisher:	Pennington, NJ : Electrochemical Society
ISBN:	9781566772464
Book Title:	Chemical sensors IV : proceedings of the symposium
Official Date:	1999
Dates:	Date Event 1999 Published
Volume:	99
Number:	23
Number of Pages:	456
Page Range:	pp. 416-419
Status:	Not Peer Reviewed
Publication Status:	Published
Publisher Statement:	Chemical Sensor IV Symposium, HONOLULU, HI, OCT 17-22, 1999
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Title of Event:	Chemical Sensors IV, Proceedings of the Symposium
Type of Event:	Conference
Location of Event:	San Diego, CA
Date(s) of Event:	1999

Request changes or add full text files to a record

Repository staff actions (login required)

View Item