Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Conducting polymer FET devices for vapour sensing

Tools
- Tools
+ Tools

Covington, James A., Gardner, J. W. and Hatfield, J. V. (1999) Conducting polymer FET devices for vapour sensing. In: Smart Structures and Materials 1999: Smart Electronics and MEMS, Newport Beach, CA , 01 Mar 1999. Published in: SPIE Proceedings, Chemical Sensors and Electronic Nose , 3673 pp. 296-307. ISSN 0277-786X.

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Official URL: http://dx.doi.org/10.1117/12.354282

Request Changes to record.

Abstract

Conducting polymer films are employed as the active material in both resistive and acoustic;waves gas sensors. Here we describe the use of an electroactive conducting polymer as the gate material in a gas-sensitive MOSFET sensor run at ambient temperature and compare it to a conventional catalytic metal gate MOSFET run at 180 degrees C. The sensors were operated with both the gate voltage V-GS and drain voltage V-DS set constant, whilst the drain currents were measured. Also V plots were made in order to characterise fully the device properties. The polymer and catalytic MOSFETs were exposed to pulses from 2,000 to 31,000 PPM of ethanol vapour at different humidities. A change in the drain current Delta I-DS was observed, for both types of MOSFET sensors. Their response was found to follow a Langmuir isotherm in ethanol concentration, with a current sensitivity of +0.4 nA and +200 nA per PPM of ethanol in air at room temperature, respectively. We believe that in the case of the polymer MOSFET, the ethanol vapour shifts the threshold voltage V-TO Of the device via a change in work function phi(ms) between the polymer and gate oxide. The polymer MOSFET is operated at room temperature and so offers potential use in a palm-top electronic nose.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Series Name: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
Journal or Publication Title: SPIE Proceedings, Chemical Sensors and Electronic Nose
Publisher: S P I E - International Society for Optical Engineering
ISSN: 0277-786X
Official Date: 1999
Dates:
DateEvent
1999Published
Volume: 3673
Page Range: pp. 296-307
Status: Not Peer Reviewed
Publication Status: Published
Reuse Statement (publisher, data, author rights): Smart Structures and Materials 1999 Conference, NEWPORT BEACH, CA, MAR 01-04, 1999
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: Smart Structures and Materials 1999: Smart Electronics and MEMS
Type of Event: Conference
Location of Event: Newport Beach, CA
Date(s) of Event: 01 Mar 1999
Related URLs:
  • Publisher

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us