The Library
Passivation effects on low-temperature gettering in multicrystalline silicon
Tools
Tools
Tools
Al-Amin, Mohammad and Murphy, John D. (2017) Passivation effects on low-temperature gettering in multicrystalline silicon. IEEE Journal of Photovoltaics, 7 (1). pp. 68-77.
![[img]](http://wrap.warwick.ac.uk/style/images/fileicons/application_pdf.png) |
PDF
WRAP_046_ieee_journal_of_photovoltaics_7_68_2017.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution. Download (4Mb) |
|
PDF
Murphy_2016-10-11_Passivation_effects_multicrystalline_silicon_REPOSITORY_STAFF_ONLY.pdf - Accepted Version Embargoed item. Restricted access to Repository staff only - Requires a PDF viewer. Download (1585Kb) |
Official URL: http://dx.doi.org/10.1109/JPHOTOV.2016.2618608
Abstract
Annealing at ≤ 500 °C changes minority carrier lifetime in as-grown multicrystalline silicon substantially. Part of the change arises from internal gettering of impurities, but surface passivation for lifetime measurement results in additional effects. We report experiments that aim to clarify the role of passivation. Long-term annealing (up to 60 h) is performed on silicon nitride passivated multicrystalline silicon, and lifetime and interstitial iron concentrations are monitored at each processing stage. Lifetime in all samples is improved under certain conditions, with improvements always achieved at 400 °C. Increases are pronounced in low-lifetime bottom samples, with improvement by a factor of 2.7 at 400 °C or 3.8 at 500 °C. Important differences are found compared with our previous study with iodine–ethanol passivation. First, as-received lifetime is higher with silicon nitride not due to a substantial difference in surface recombination. Second, while interstitial iron concentrations often initially increase with iodine–ethanol, they tend to reduce with silicon nitride. Third, lifetime in high-lifetime samples reduces substantially with iodine–ethanol but increases with silicon nitride. Secondary ion mass spectrometry reveals high iron concentrations in annealed silicon nitride. Results are discussed in terms of gettering of impurities to, and bulk passivation arising from, silicon nitride films.
| Item Type: | Journal Article | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TP Chemical technology | |||||||||||||||
| Divisions: | Faculty of Science > Engineering | |||||||||||||||
| Library of Congress Subject Headings (LCSH): | Silicon, Annealing of crystals, Iron | |||||||||||||||
| Journal or Publication Title: | IEEE Journal of Photovoltaics | |||||||||||||||
| Publisher: | IEEE | |||||||||||||||
| ISSN: | 2156-3381 | |||||||||||||||
| Official Date: | January 2017 | |||||||||||||||
| Dates: |
|
|||||||||||||||
| Date of first compliant deposit: | 28 October 2016 | |||||||||||||||
| Volume: | 7 | |||||||||||||||
| Number: | 1 | |||||||||||||||
| Page Range: | pp. 68-77 | |||||||||||||||
| Status: | Peer Reviewed | |||||||||||||||
| Publication Status: | Published | |||||||||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||||||||
| RIOXX Funder/Project Grant: |
|
|||||||||||||||
| Related URLs: |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
