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Data for Determination of band offsets, hybridization and exciton binding in 2D semiconductor heterostructures
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Wilson, Neil R., Nguyen, Paul V., Seyler, Kyle, Rivera, Pasqual, Marsden, Alexander J., Laker, Zachary P. L., Constantinescu, Gabriel C., Kandyba, Viktor, Barinov, Alexei, Hine, Nicholas, Xu, Xiaodong and Cobden, David H. (2017) Data for Determination of band offsets, hybridization and exciton binding in 2D semiconductor heterostructures. [Dataset]
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Abstract
Combining monolayers of different two-dimensional semiconductors into heterostructures creates new phenomena and device possibilities. Understanding and exploiting these phenomena hinge on knowing the electronic structure and the properties of interlayer excitations. We determine the key unknown parameters in MoSe2/WSe2 heterobilayers by using rational device design and submicrometer angle-resolved photoemission spectroscopy (μ-ARPES) in combination with photoluminescence. We find that the bands in the K-point valleys are weakly hybridized, with a valence band offset of 300 meV, implying type II band alignment. We deduce that the binding energy of interlayer excitons is more than 200 meV, an order of magnitude higher than that in analogous GaAs structures. Hybridization strongly modifies the bands at Γ, but the valence band edge remains at the K points. We also find that the spectrum of a rotationally aligned heterobilayer reflects a mixture of commensurate and incommensurate domains. These results directly answer many outstanding questions about the electronic nature of MoSe2/WSe2 heterobilayers and demonstrate a practical approach for high spectral resolution in ARPES of device-scale structures.
| Item Type: | Dataset | ||||||||||||||||||||||||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science > Physics | ||||||||||||||||||||||||||||||
| Type of Data: | Various. Mostly plain text and .ibw | ||||||||||||||||||||||||||||||
| Library of Congress Subject Headings (LCSH): | Photoluminescence, Semiconductors, Heterostructures | ||||||||||||||||||||||||||||||
| Publisher: | Department of Physics, University of Warwick | ||||||||||||||||||||||||||||||
| Official Date: | 14 February 2017 | ||||||||||||||||||||||||||||||
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| Status: | Not Peer Reviewed | ||||||||||||||||||||||||||||||
| Access rights to Published version: | Open Access | ||||||||||||||||||||||||||||||
| Description: | These folders include the data used in the images in the main paper. Further data can be obtained on request from the authors. Below are the scaling for the datasets, where required. Fig1 Fig1F_G_ML_WSe2_diff2 Fig1G_BL_WSe2 Fig1G_BL_WSe2_diff2 Fig1G_bulkWSe2 Fig1G_bulkWSe2_diff2 Fig1C_SPEM_MAX Fig1D_ML Fig1D_BL Fig1D_bulk Fig1E_Gr_K Fig2 Fig2B_HS Fig2B_MoSe2 Fig2B_WSe2 Fig2F_Heterobilayer Fig2F_Heterobilayer_diff2 Fig2D_MoSe2 Fig2D_MoSe2_diff2 Fig2E_WSe2 Fig2E_WSe2_diff2 Fig2G_twistedbilayer Fig2G_twistedbilayer_diff2 Fig4 DFT_QESPRESSO_DATA_FOR_SCI_ADV |
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