Cathodoluminescence study of H-implanted B-doped diamond samples
UNSPECIFIED (2004) Cathodoluminescence study of H-implanted B-doped diamond samples. In: 14th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, Salzburg, AUSTRIA, SEP 08-12, 2003. Published in: DIAMOND AND RELATED MATERIALS, 13 (4-8). pp. 944-947.Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.diamond.2003.10.003
This paper reports a catholuminescence (CL) spectroscopy study of a high pressure high temperature (HPHT) B-doped diamond implanted with hydrogen. CL spectra were acquired with different electron beam energies, allowing the analysis from different depths of the sample. In this way both the implanted layer and the boundary region were investigated. Several features were detected, related both to the acceptor compensation and to lattice damage from the ion implantation process. The sample was subsequently annealed (temperatures up to 1000 degreesC) and the behaviour of the signals was followed with CL spectroscopy, showing the changes in the lattice structure. (C) 2003 Elsevier B.V. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)|
|Journal or Publication Title:||DIAMOND AND RELATED MATERIALS|
|Publisher:||ELSEVIER SCIENCE SA|
|Official Date:||April 2004|
|Number of Pages:||4|
|Page Range:||pp. 944-947|
|Title of Event:||14th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide|
|Location of Event:||Salzburg, AUSTRIA|
|Date(s) of Event:||SEP 08-12, 2003|
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