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Enhanced stability and efficiency in hole-transport-layer-free CsSnI3 perovskite photovoltaics

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Marshall, Kenneth P., Walker, Marc, Walton, Richard I. and Hatton, Ross A. (2016) Enhanced stability and efficiency in hole-transport-layer-free CsSnI3 perovskite photovoltaics. Nature Energy, 1 . 16178. doi:10.1038/NENERGY.2016.178

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Official URL: http://dx.doi.org/10.1038/nenergy.2016.178

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Abstract

Photovoltaics based on tin halide perovskites have not yet benefitted from the same intensive research effort that has propelled lead perovskite photovoltaics to >20% power conversion efficiency, due to the susceptibility of tin perovskites to oxidation, the low energy of defect formation and the difficultly in forming pin-hole free films. Here we report CsSnI3 perovskite photovoltaic devices without a hole-selective interfacial layer that exhibit a stability 10 times greater than devices with the same architecture using methylammonium lead iodide perovskite, and the highest efficiency to date for a CsSnI3 photovoltaic: 3.56%. The latter results in large part from a high device fill-factor, achieved using a strategy that removes the need for an electron blocking layer or an additional processing step to minimise the pinhole density in the perovskite film, based on co-depositing the perovskite precursors with SnCl2. These two findings raise the prospect that this class of lead-free perovskite photovoltaic may yet prove viable for applications.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Q Science > QE Geology
Divisions: Faculty of Science > Chemistry
Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Perovskite, Photovoltaic cells
Journal or Publication Title: Nature Energy
Publisher: Nature Publishing Group
ISSN: 2058-7546
Official Date: 21 November 2016
Dates:
DateEvent
21 November 2016Available
1 October 2016Accepted
16 May 2016Submitted
Volume: 1
Article Number: 16178
DOI: 10.1038/NENERGY.2016.178
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/L505110/1, EP/N009096/1

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