Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T
UNSPECIFIED (2004) Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T. In: 7th International Symposium on Research in High Magnetic Fields, Inst Natl Sci Appl, Toulouse, FRANCE, JUL 20-23, 2003. Published in: PHYSICA B-CONDENSED MATTER, 346 pp. 548-552.Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.physb.2004.01.145
Microminiature Hall probes with sensitive area down to 33 x 115 mum and based on n-InSb/i-GaAs optimized Sn-doped MBE-grown heterostructures are reported. The "metallurgical" thicknesses of the n-InSb epilayers lie in the range d(m) = 1.1-10.5 mum giving room-temperature mobilities of (9-15)x 10(3) cm(2)/Vs with carrier densities of (0.96-2.56)x 10(18) cm(-3). Characterization of the devices was performed by magnetotransport measurements in quasi-static and pulsed magnetic fields. In the temperature range 1.1-300 K and in magnetic fields up to 12 T (static) and up to 52 T (pulsed, iota = 120 mS), transport measurements yield remarkable linearity of the Hall voltage up to 52 T and sensitivity, as well as demonstrating the high-temperature stability of the Hall voltage, the offset voltage and the device resistivity. No significant effect of the high current up to 150 mA on either the sensitivity or the resistivity is observed. (C) 2004 Elsevier B.V. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICA B-CONDENSED MATTER|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||30 April 2004|
|Number of Pages:||5|
|Page Range:||pp. 548-552|
|Title of Event:||7th International Symposium on Research in High Magnetic Fields|
|Location of Event:||Inst Natl Sci Appl, Toulouse, FRANCE|
|Date(s) of Event:||JUL 20-23, 2003|
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