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Electronic and optical properties of ZnIn2Te4
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UNSPECIFIED. (2004) Electronic and optical properties of ZnIn2Te4. PHYSICA B-CONDENSED MATTER, 348 (1-4). pp. 382-390. ISSN 0921-4526
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Official URL: http://dx.doi.org/10.1016/j.physb.2004.01.004
Abstract
Band structure and optical properties of defect-chalcopyrite-type semiconductor ZnIn2Te4 have been studied by TB-LMTO first-principle technique. The band structure calculation suggests that ZnIn2Te4 is a direct-gap semiconductor having a band gap of 1.37 eV., which is very close to the experimentally measured value, 1.40 eV. The calculated optical response functions confirm the experimentally measured values. (C) 2004 Elsevier B.V. All rights reserved.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | PHYSICA B-CONDENSED MATTER |
| Publisher: | ELSEVIER SCIENCE BV |
| ISSN: | 0921-4526 |
| Date: | 1 May 2004 |
| Volume: | 348 |
| Number: | 1-4 |
| Number of Pages: | 9 |
| Page Range: | pp. 382-390 |
| Identification Number: | 10.1016/j.physb.2004.01.004 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/8435 |
Data sourced from Thomson Reuters' Web of Knowledge
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