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Spatial regularity of InAs-GaAs quantum dots : quantifying the dependence of lateral ordering on growth rate

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Konishi, T., Clarke, E., Burrows, Christopher W., Bomphrey, John James, Murray, R. and Bell, Gavin R. (2017) Spatial regularity of InAs-GaAs quantum dots : quantifying the dependence of lateral ordering on growth rate. Scientific Reports, 7 . 42606 . doi:10.1038/srep42606

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Official URL: http://doi.org/10.1038/srep42606

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Abstract

The lateral ordering of arrays of self-assembled InAs-GaAs quantum dots (QDs) has been quantified as a function of growth rate, using the Hopkins-Skellam index (HSI). Coherent QD arrays have a spatial distribution which is neither random nor ordered, but intermediate. The lateral ordering improves as the growth rate is increased and can be explained by more spatially regular nucleation as the QD density increases. By contrast, large and irregular 3D islands are distributed randomly on the surface. This is consistent with a random selection of the mature QDs relaxing by dislocation nucleation at a later stage in the growth, independently of each QD’s surroundings. In addition we explore the statistical variability of the HSI as a function of the number N of spatial points analysed, and we recommend N > 103 to reliably distinguish random from ordered arrays.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Chemistry
Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Quantum dots., Molecular beam epitaxy.
Journal or Publication Title: Scientific Reports
Publisher: Nature Publishing Group
ISSN: 2045-2322
Official Date: 13 February 2017
Dates:
DateEvent
13 February 2017Published
11 January 2017Available
14 December 2016Accepted
Volume: 7
Article Number: 42606
DOI: 10.1038/srep42606
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: GR/S05762/01
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