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High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs
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Hamilton, Dean P., Jennings, Michael R., Pérez-Tomás, Amador, Russell, Stephen A. O., Hindmarsh, Steven A., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs. IEEE Transactions on Power Electronics, 32 (10). pp. 7967-7979. doi:10.1109/TPEL.2016.2636743 ISSN 0885-8993.
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Official URL: http://dx.doi.org/10.1109/TPEL.2016.2636743
Abstract
The temperature dependence and stability of three different commercially-available unpackaged SiC DMOSFETs have been measured. On-state resistances increased to 6 or 7 times their room temperature values at 350 °C. Threshold voltages almost doubled after tens of minutes of positive gate voltage stressing at 300 °C, but approached their original values again after only one or two minutes of negative gate bias stressing. Fortunately, the change in drain current due to these threshold instabilities was almost negligible. However, the threshold approaches zero volts at high temperatures after a high temperature negative gate bias stress. The zero gate bias leakage is low until the threshold voltage reduces to approximately 150 mV, where-after the leakage increases exponentially. Thermal aging tests demonstrated a sudden change from linear to non-linear output characteristics after 24 to 100 hours air storage at 300 °C and after 570 to 1000 hours in N2 atmosphere. We attribute this to nickel oxide growth on the drain contact metallization which forms a heterojunction p-n diode with the SiC substrate. It was determined that these state-of-the-art SiC MOSFET devices may be operated in real applications at temperatures far exceeding their rated operating temperatures.
Item Type: | Journal Article | ||||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors -- Testing, Temperature measurements, Insulated gate bipolar transistors, Silicon carbide | ||||||||
Journal or Publication Title: | IEEE Transactions on Power Electronics | ||||||||
Publisher: | IEEE | ||||||||
ISSN: | 0885-8993 | ||||||||
Official Date: | October 2016 | ||||||||
Dates: |
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Volume: | 32 | ||||||||
Number: | 10 | ||||||||
Page Range: | pp. 7967-7979 | ||||||||
DOI: | 10.1109/TPEL.2016.2636743 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||
Date of first compliant deposit: | 22 December 2016 | ||||||||
Date of first compliant Open Access: | 22 December 2016 | ||||||||
Funder: | European Regional Development Fund (ERDF), Advantage West Midlands (AWM) | ||||||||
Version or Related Resource: | http://wrap.warwick.ac.uk/84860 |
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