Hamilton, Dean P., Jennings, Michael R., Pérez-Tomás, Amador, Russell, Stephen A. O., Hindmarsh, Steven A., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs. IEEE Transactions on Power Electronics, 32 (10). pp. 7967-7979. doi:10.1109/TPEL.2016.2636743

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Abstract

The temperature dependence and stability of three different commercially-available unpackaged SiC DMOSFETs have been measured. On-state resistances increased to 6 or 7 times their room temperature values at 350 °C. Threshold voltages almost doubled after tens of minutes of positive gate voltage stressing at 300 °C, but approached their original values again after only one or two minutes of negative gate bias stressing. Fortunately, the change in drain current due to these threshold instabilities was almost negligible. However, the threshold approaches zero volts at high temperatures after a high temperature negative gate bias stress. The zero gate bias leakage is low until the threshold voltage reduces to approximately 150 mV, where-after the leakage increases exponentially. Thermal aging tests demonstrated a sudden change from linear to non-linear output characteristics after 24 to 100 hours air storage at 300 °C and after 570 to 1000 hours in N2 atmosphere. We attribute this to nickel oxide growth on the drain contact metallization which forms a heterojunction p-n diode with the SiC substrate. It was determined that these state-of-the-art SiC MOSFET devices may be operated in real applications at temperatures far exceeding their rated operating temperatures.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH):	Metal oxide semiconductor field-effect transistors -- Testing, Temperature measurements, Insulated gate bipolar transistors, Silicon carbide
Journal or Publication Title:	IEEE Transactions on Power Electronics
Publisher:	IEEE
ISSN:	0885-8993
Official Date:	October 2016
Dates:	Date Event October 2016 Published 7 December 2016 Available 23 November 2016 Accepted
Volume:	32
Number:	10
Page Range:	pp. 7967-7979
DOI:	10.1109/TPEL.2016.2636743
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	European Regional Development Fund (ERDF), Advantage West Midlands (AWM)
Version or Related Resource:	http://wrap.warwick.ac.uk/84860

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