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Enhanced field effect mobility on 4H-SiC by oxidation at 1500◦C
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Thomas, S. M., Sharma, Yogesh K., Crouch, M. A., Fisher, Craig A., Pérez-Tomás, Amador, Jennings, M. R. and Mawby, P. A. (Philip A.) (2014) Enhanced field effect mobility on 4H-SiC by oxidation at 1500◦C. IEEE Journal of the Electron Devices Society, 2 (5). pp. 114-117. ISSN 2168-6734.
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Official URL: https://doi.org/10.1109%2Fjeds.2014.2330737
Abstract
A novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm\2 V-1 s-1 without post oxidation passivation. This is substantially higher than other reports of MOSFETs with thermally grown oxides (typically grown at the standard silicon temperature range of 1100-1200°C). This result shows the potential of a high temperature oxidation step for reducing the channel resistance (thus the overall conduction loss), in power 4H-SiC MOSFETs.
| Item Type: | Journal Article | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
| Journal or Publication Title: | IEEE Journal of the Electron Devices Society | ||||||||
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) | ||||||||
| ISSN: | 2168-6734 | ||||||||
| Official Date: | 8 July 2014 | ||||||||
| Dates: |
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| Volume: | 2 | ||||||||
| Number: | 5 | ||||||||
| Page Range: | pp. 114-117 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published |
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