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Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures
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Wilson, Neil R., Nguyen, Paul V., Seyler, Kyle, Rivera, Pasqual, Marsden, Alexander J., Laker, Zachary P. L., Constantinescu, Gabriel C., Kandyba, Viktor, Barinov, Alexei, Hine, Nicholas, Xu, Xiaodong and Cobden, David H. (2017) Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures. Science Advances, 3 (2). e1601832. doi:10.1126/sciadv.1601832 ISSN 2375-2548.
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Official URL: http://dx.doi.org/10.1126/sciadv.1601832
Abstract
Combining monolayers of different two-dimensional semiconductors into heterostructures creates new phenomena and device possibilities. Understanding and exploiting these phenomena hinge on knowing the electronic structure and the properties of interlayer excitations. We determine the key unknown parameters in MoSe2/WSe2 heterobilayers by using rational device design and submicrometer angle-resolved photoemission spectroscopy (μ-ARPES) in combination with photoluminescence. We find that the bands in the K-point valleys are weakly hybridized, with a valence band offset of 300 meV, implying type II band alignment. We deduce that the binding energy of interlayer excitons is more than 200 meV, an order of magnitude higher than that in analogous GaAs structures. Hybridization strongly modifies the bands at Γ, but the valence band edge remains at the K points. We also find that the spectrum of a rotationally aligned heterobilayer reflects a mixture of commensurate and incommensurate domains. These results directly answer many outstanding questions about the electronic nature of MoSe2/WSe2 heterobilayers and demonstrate a practical approach for high spectral resolution in ARPES of device-scale structures.
Item Type: | Journal Article | ||||||||||||||||||||||||||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||||||||||||||||||||||||
Library of Congress Subject Headings (LCSH): | Photoluminescence, Semiconductors , Heterostructures | ||||||||||||||||||||||||||||||
Journal or Publication Title: | Science Advances | ||||||||||||||||||||||||||||||
Publisher: | American Association for the Advancement of Science | ||||||||||||||||||||||||||||||
ISSN: | 2375-2548 | ||||||||||||||||||||||||||||||
Official Date: | 1 February 2017 | ||||||||||||||||||||||||||||||
Dates: |
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Volume: | 3 | ||||||||||||||||||||||||||||||
Number: | 2 | ||||||||||||||||||||||||||||||
Page Range: | e1601832 | ||||||||||||||||||||||||||||||
DOI: | 10.1126/sciadv.1601832 | ||||||||||||||||||||||||||||||
Status: | Peer Reviewed | ||||||||||||||||||||||||||||||
Publication Status: | Published | ||||||||||||||||||||||||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||||||||||||||||||||||||
Date of first compliant deposit: | 15 February 2017 | ||||||||||||||||||||||||||||||
Date of first compliant Open Access: | 16 February 2017 | ||||||||||||||||||||||||||||||
RIOXX Funder/Project Grant: |
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