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Optical response of strained- and unstrained-silicon cold-electron bolometers

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Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R. (David R.), Morozov, D. V., Myronov, Maksym, Parker, Evan H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, Terry E. and Mauskopf, P. D. (2016) Optical response of strained- and unstrained-silicon cold-electron bolometers. Journal of Low Temperature Physics, 184 (1-2). pp. 231-237. doi:10.1007/s10909-016-1569-x

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Official URL: http://dx.doi.org/10.1007/s10909-016-1569-x

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Abstract

We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ( 32×14 μm32×14 μm ) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of 3.0×10−163.0×10−16 and 6.6×10−17 WHz−1/26.6×10−17 WHz−1/2 for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: Journal of Low Temperature Physics
Publisher: Springer New York LLC
ISSN: 0022-2291
Official Date: July 2016
Dates:
DateEvent
July 2016Published
9 March 2016Available
24 February 2016Accepted
Volume: 184
Number: 1-2
Page Range: pp. 231-237
DOI: 10.1007/s10909-016-1569-x
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access

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