Shah, V. A., Rhead, Stephen, Finch, June, Myronov, Maksym, Reparaz, J. S., Morris, R. J. H. (Richard J. H.), Wilson, Neil R., Kachkanov, V. , Dolbnya, I. P., Halpin, John E., Patchett, D. , Allred, Phil, Colston, Gerard B., Sawhney, K. J. S., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2015) Electrical properties and strain distribution of Ge suspended structures. Solid-State Electronics, 108 . pp. 13-18. doi:10.1016/j.sse.2014.12.004 ISSN 0038-1101.

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Request Changes to record.

Abstract

Germanium membranes and microstructures of 50–1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray diffraction and micro-Raman spectroscopy. The strain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an RMS roughness below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	Solid-State Electronics
Publisher:	Elsevier
ISSN:	0038-1101
Official Date:	June 2015
Dates:	Date Event June 2015 Published
Volume:	108
Page Range:	pp. 13-18
DOI:	10.1016/j.sse.2014.12.004
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

Request changes or add full text files to a record

Repository staff actions (login required)

View Item