The Library
Electrical properties and strain distribution of Ge suspended structures
Tools
Tools
Tools
Shah, V. A., Rhead, Stephen, Finch, June, Myronov, Maksym, Reparaz, J. S., Morris, R. J. H. (Richard J. H.), Wilson, Neil R., Kachkanov, V. , Dolbnya, I. P., Halpin, John E., Patchett, D. , Allred, Phil, Colston, Gerard B., Sawhney, K. J. S., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2015) Electrical properties and strain distribution of Ge suspended structures. Solid-State Electronics, 108 . pp. 13-18. doi:10.1016/j.sse.2014.12.004
Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1016/j.sse.2014.12.004
Abstract
Germanium membranes and microstructures of 50–1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray diffraction and micro-Raman spectroscopy. The strain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an RMS roughness below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
||||
| Journal or Publication Title: | Solid-State Electronics | ||||
| Publisher: | Elsevier | ||||
| ISSN: | 0038-1101 | ||||
| Official Date: | June 2015 | ||||
| Dates: |
|
||||
| Volume: | 108 | ||||
| Page Range: | pp. 13-18 | ||||
| DOI: | 10.1016/j.sse.2014.12.004 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
