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Data for Non-radiative step facets in semiconductor nanowires
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Beanland, R., Sánchez, Ana M. and Hine, Nicholas (2018) Data for Non-radiative step facets in semiconductor nanowires. [Dataset]
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Official URL: https://wrap.warwick.ac.uk/86316/
Abstract
One of the main advantages of nanowires for functional applications is their high perfection, which results from surface image forces that act on line defects such as dislocations, rendering them unstable and driving them out of the crystal. Here we show that there is a class of step facets that are stable in nanowires, with no long-range strain field or dislocation character. In zinc-blende semiconductors, they take the form of Ʃ3 (112) facets with heights constrained to be a multiple of three {111} monolayers. Density functional theory calculations show that they act as non-radiative recombination centres and have deleterious effects on nanowire properties. We present experimental observations of these defects on twin boundaries and twins that terminate inside GaAsP nanowires and find that they are indeed always multiples of three monolayers in height. Strategies to use the three-monolayer rule during growth to prevent their formation are discussed.
| Item Type: | Dataset | ||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||
| Type of Data: | Experimental data | ||||||
| Library of Congress Subject Headings (LCSH): | Semiconductors, Nanowires | ||||||
| Journal or Publication Title: | Nano Letters | ||||||
| Publisher: | University of Warwick, Department of Physics | ||||||
| Official Date: | 28 March 2018 | ||||||
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| Status: | Not Peer Reviewed | ||||||
| Media of Output (format): | .rar | ||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||
| Copyright Holders: | University of Warwick | ||||||
| Description: | Experimental data underpinning article and relating to fitures 1, 2, 3a, 3b, 4. |
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| RIOXX Funder/Project Grant: |
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