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Evaluation of SiC schottky diodes using pressure contacts
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Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Aliyu, Attahir, Rajaguru, Pushparajah, Castellazzi, Alberto, Ran, Li, Mawby, P. A. (Philip A.) and Bailey, Chris (2017) Evaluation of SiC schottky diodes using pressure contacts. IEEE Transactions on Industrial Electronics, 64 (10). 8213 -8223. doi:10.1109/TIE.2017.2677348 ISSN 0278-0046.
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Official URL: http://dx.doi.org/10.1109/TIE.2017.2677348
Abstract
The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristorbased applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reverse conduction capability. In these high power applications, paralleling chips for high current conduction capability is a requirement, hence, electrothermal stability during current sharing is critical. SiC Schottky diodes not only exhibit the advantages of wide bandgap technology compared to silicon PiN diodes, but they have significantly lower zero temperature coefficient (ZTC) meaning they are more electrothermally stable. The lower ZTC is due to the unipolar nature of SiC Schottky diodes as opposed to the bipolar nature of PiN diodes. This paper investigates the implementation and reliability of SiC Schottky diodes in press-pack assemblies. The impact of pressure loss on the electrothermal stability of parallel devices is investigated.
| Item Type: | Journal Article | ||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
| Library of Congress Subject Headings (LCSH): | Semiconductors -- Packaging, Diodes, Schottky-barrier, Silicon carbide | ||||||||
| Journal or Publication Title: | IEEE Transactions on Industrial Electronics | ||||||||
| Publisher: | IEEE | ||||||||
| ISSN: | 0278-0046 | ||||||||
| Official Date: | October 2017 | ||||||||
| Dates: |
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| Volume: | 64 | ||||||||
| Number: | 10 | ||||||||
| Page Range: | 8213 -8223 | ||||||||
| DOI: | 10.1109/TIE.2017.2677348 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Date of first compliant deposit: | 15 March 2017 | ||||||||
| Date of first compliant Open Access: | 15 March 2017 | ||||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||||||
| Grant number: | EP/L007010/1, EP/K034804/1, EP/K035304/1 |
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