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Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon

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Niewelt, T., Selinger, M., Grant, Nicholas E., Kwapil, W. M., Murphy, John D. and Schubert, M. C. (2017) Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon. Journal of Applied Physics, 121 (18). 185702. ISSN 0021-8979.

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Official URL: http://dx.doi.org/10.1063/1.4983024

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Abstract

In this paper, we present new insight in the degradation and subsequent recovery of charge carrier lifetime upon light soaking at 75 °C observed in float-zone silicon wafers. Variations of doping type, dielectric passivation schemes and thermal treatments after layer deposition were performed. The degradation was only observed for p-type float-zone silicon wafers passivated with passivation schemes involving silicon nitride layers. An influence of thermal treatments after deposition was found. N-type wafers did not degrade independent of their passivation scheme. Room temperature re-passivation experiments showed the degradation to affect the wafer bulk, and photoluminescence studies demonstrated fine lateral striations of effective lifetime. We conclude that the degradation is caused by bulk defects that might be related to hydrogen complexes.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Silicon -- Electric properties, Photovoltaic cells, Solar cells
Journal or Publication Title: Journal of Applied Physics
Publisher: American Institute of Physics
ISSN: 0021-8979
Official Date: 14 May 2017
Dates:
DateEvent
14 May 2017Published
8 May 2017Available
23 April 2017Accepted
Volume: 121
Number: 18
Article Number: 185702
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)
Date of first compliant deposit: 9 May 2017
Date of first compliant Open Access: 9 May 2017
Funder: Deutschland Bundesministerium für Wirtschaft und Energie [German Federal Ministry for Economic Affairs and Energy] (BMWi), Engineering and Physical Sciences Research Council (EPSRC)
Grant number: Contract No. 0325763A (BMWi), EP/M024911/1 (EPSRC)

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