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Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
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Niewelt, T., Selinger, M., Grant, Nicholas E., Kwapil, W. M., Murphy, John D. and Schubert, M. C. (2017) Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon. Journal of Applied Physics, 121 (18). 185702.
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Official URL: http://dx.doi.org/10.1063/1.4983024
Abstract
In this paper, we present new insight in the degradation and subsequent recovery of charge carrier lifetime upon light soaking at 75 °C observed in float-zone silicon wafers. Variations of doping type, dielectric passivation schemes and thermal treatments after layer deposition were performed. The degradation was only observed for p-type float-zone silicon wafers passivated with passivation schemes involving silicon nitride layers. An influence of thermal treatments after deposition was found. N-type wafers did not degrade independent of their passivation scheme. Room temperature re-passivation experiments showed the degradation to affect the wafer bulk, and photoluminescence studies demonstrated fine lateral striations of effective lifetime. We conclude that the degradation is caused by bulk defects that might be related to hydrogen complexes.
| Item Type: | Journal Article | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
| Divisions: | Faculty of Science > Engineering | ||||||||
| Library of Congress Subject Headings (LCSH): | Silicon -- Electric properties, Photovoltaic cells, Solar cells | ||||||||
| Journal or Publication Title: | Journal of Applied Physics | ||||||||
| Publisher: | American Institute of Physics | ||||||||
| ISSN: | 0021-8979 | ||||||||
| Official Date: | 14 May 2017 | ||||||||
| Dates: |
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| Volume: | 121 | ||||||||
| Number: | 18 | ||||||||
| Article Number: | 185702 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Open Access | ||||||||
| Funder: | Deutschland Bundesministerium für Wirtschaft und Energie [German Federal Ministry for Economic Affairs and Energy] (BMWi), Engineering and Physical Sciences Research Council (EPSRC) | ||||||||
| Grant number: | Contract No. 0325763A (BMWi), EP/M024911/1 (EPSRC) |
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